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1. Identificação
Tipo de ReferênciaArtigo em Revista Científica (Journal Article)
Sitemtc-m16.sid.inpe.br
Código do Detentorisadg {BR SPINPE} ibi 8JMKD3MGPCW/3DT298S
Identificador6qtX3pFwXQZ3r59YDa/FEhyh
Repositóriosid.inpe.br/iris@1916/2005/04.04.14.42   (acesso restrito)
Última Atualização2005:04.04.03.00.00 (UTC) administrator
Repositório de Metadadossid.inpe.br/iris@1916/2005/04.04.14.42.07
Última Atualização dos Metadados2018:06.05.01.28.21 (UTC) administrator
Chave SecundáriaINPE-12292-PRE/7612
ISSN0168-583X
0167-5087
Chave de CitaçãoAbramofBelGomBerReu:2000:AnXrRo
TítuloAnalysis of X-ray rocking curves in (0 0 1) silicon crystals implanted with nitrogen by plasma immersion ion implantation
Ano2000
Data de Acesso21 maio 2024
Tipo SecundárioPRE PI
Número de Arquivos1
Tamanho191 KiB
2. Contextualização
Autor1 Abramof, Eduardo
2 Beloto, Antonio Fernando
3 Gomes, Geraldo F.
4 Berni, Luis Angelo
5 Reuther, H.
Identificador de Curriculo1 8JMKD3MGP5W/3C9JGUH
2 8JMKD3MGP5W/3C9JGJ8
Grupo1 LAS-INPE-MCT-BR
2 LAP-INPE-MCT-BR
Afiliação1 Laboratorio Associado de Sensores e Materiais, Instituto Nacional de Pesquisas Espaciais, CP515, 12201-970, S~ao Jose dos Campos
2 Research Center Rossendorf, Institute of Ion Beam Physics and Materials Research, Dresden, Germany
RevistaNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
Volume161
Páginas1054-1057
Histórico (UTC)2006-01-23 09:54:21 :: sergio -> administrator ::
2007-04-04 20:50:36 :: administrator -> sergio ::
2008-01-07 12:52:40 :: sergio -> administrator ::
2018-06-05 01:28:21 :: administrator -> marciana :: 2000
3. Conteúdo e estrutura
É a matriz ou uma cópia?é a matriz
Estágio do Conteúdoconcluido
Transferível1
Tipo do ConteúdoExternal Contribution
Palavras-ChaveHigh resolution X-ray di€
raction
Plasma immersion ion implantation
Surface analysis
Silicon crystals
ResumoHigh-resolution X-ray diraction methods have been used to characterize nitrogen-doped silicon obtained by plasma immersion ion implantation (PIII). The Si wafers were implanted with the plasma potential controlled at 70 V, and a plasma density of 1:5 1010 cmÿ3. The high voltage pulser was operated with peak voltage of 10 kV, 6 ls pulse duration and repetition frequency of 20 Hz. Auger electron spectroscopy (AES) measurements were carried out revealing successful implantation of ions with accumulated nitrogen dose of 1:5 1017 cmÿ2. The (0 0 4) Si rocking curve (x-scan) was measured in a high resolution X-ray diractometer equipped with a Ge(2 2 0) four crystal monochromator before and after implantation. A small distortion of the Si(0 0 4)-rocking curve was clearly observed for the as-implanted sample. This rocking curve was simulated by dynamical theory of X-ray diraction, assuming a Gaussian strain distribution through the implanted region and using the data from the nitrogen pro®le obtained from the Auger measurements. With these assumptions, a good agreement between the measured and simulated rocking curves was obtained. Ó 2000 Elsevier Science B.V. All rights reserved.
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4. Condições de acesso e uso
Idiomaen
Arquivo Alvoanalysis of x-ray.pdf
Grupo de Usuáriosadministrator
sergio
Visibilidadeshown
Detentor da CópiaSID/SCD
Política de Arquivamentodenypublisher denyfinaldraft24
Permissão de Leituradeny from all and allow from 150.163
5. Fontes relacionadas
Unidades Imediatamente Superiores8JMKD3MGPCW/3ESR3H2
8JMKD3MGPCW/3ET2RFS
DivulgaçãoWEBSCI; PORTALCAPES; COMPENDEX.
Acervo Hospedeirosid.inpe.br/banon/2003/08.15.17.40
6. Notas
Campos Vaziosalternatejournal archivist callnumber copyright creatorhistory descriptionlevel documentstage doi e-mailaddress electronicmailaddress format isbn label lineage mark mirrorrepository month nextedition notes number orcid parameterlist parentrepositories previousedition previouslowerunit progress project readergroup rightsholder schedulinginformation secondarydate secondarymark session shorttitle sponsor subject tertiarymark tertiarytype typeofwork url versiontype
7. Controle da descrição
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