1. Identificação | |
Tipo de Referência | Artigo em Revista Científica (Journal Article) |
Site | mtc-m16.sid.inpe.br |
Código do Detentor | isadg {BR SPINPE} ibi 8JMKD3MGPCW/3DT298S |
Identificador | 6qtX3pFwXQZ3r59YDa/FEhyh |
Repositório | sid.inpe.br/iris@1916/2005/04.04.14.42 (acesso restrito) |
Última Atualização | 2005:04.04.03.00.00 (UTC) administrator |
Repositório de Metadados | sid.inpe.br/iris@1916/2005/04.04.14.42.07 |
Última Atualização dos Metadados | 2018:06.05.01.28.21 (UTC) administrator |
Chave Secundária | INPE-12292-PRE/7612 |
ISSN | 0168-583X 0167-5087 |
Chave de Citação | AbramofBelGomBerReu:2000:AnXrRo |
Título | Analysis of X-ray rocking curves in (0 0 1) silicon crystals implanted with nitrogen by plasma immersion ion implantation |
Ano | 2000 |
Data de Acesso | 21 maio 2024 |
Tipo Secundário | PRE PI |
Número de Arquivos | 1 |
Tamanho | 191 KiB |
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2. Contextualização | |
Autor | 1 Abramof, Eduardo 2 Beloto, Antonio Fernando 3 Gomes, Geraldo F. 4 Berni, Luis Angelo 5 Reuther, H. |
Identificador de Curriculo | 1 8JMKD3MGP5W/3C9JGUH 2 8JMKD3MGP5W/3C9JGJ8 |
Grupo | 1 LAS-INPE-MCT-BR 2 LAP-INPE-MCT-BR |
Afiliação | 1 Laboratorio Associado de Sensores e Materiais, Instituto Nacional de Pesquisas Espaciais, CP515, 12201-970, S~ao Jose dos Campos 2 Research Center Rossendorf, Institute of Ion Beam Physics and Materials Research, Dresden, Germany |
Revista | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms |
Volume | 161 |
Páginas | 1054-1057 |
Histórico (UTC) | 2006-01-23 09:54:21 :: sergio -> administrator :: 2007-04-04 20:50:36 :: administrator -> sergio :: 2008-01-07 12:52:40 :: sergio -> administrator :: 2018-06-05 01:28:21 :: administrator -> marciana :: 2000 |
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3. Conteúdo e estrutura | |
É a matriz ou uma cópia? | é a matriz |
Estágio do Conteúdo | concluido |
Transferível | 1 |
Tipo do Conteúdo | External Contribution |
Palavras-Chave | High resolution X-ray di€ raction Plasma immersion ion implantation Surface analysis Silicon crystals |
Resumo | High-resolution X-ray diraction methods have been used to characterize nitrogen-doped silicon obtained by plasma immersion ion implantation (PIII). The Si wafers were implanted with the plasma potential controlled at 70 V, and a plasma density of 1:5 1010 cmÿ3. The high voltage pulser was operated with peak voltage of 10 kV, 6 ls pulse duration and repetition frequency of 20 Hz. Auger electron spectroscopy (AES) measurements were carried out revealing successful implantation of ions with accumulated nitrogen dose of 1:5 1017 cmÿ2. The (0 0 4) Si rocking curve (x-scan) was measured in a high resolution X-ray diractometer equipped with a Ge(2 2 0) four crystal monochromator before and after implantation. A small distortion of the Si(0 0 4)-rocking curve was clearly observed for the as-implanted sample. This rocking curve was simulated by dynamical theory of X-ray diraction, assuming a Gaussian strain distribution through the implanted region and using the data from the nitrogen pro®le obtained from the Auger measurements. With these assumptions, a good agreement between the measured and simulated rocking curves was obtained. Ó 2000 Elsevier Science B.V. All rights reserved. |
Área | FISMAT |
Arranjo 1 | urlib.net > BDMCI > Fonds > Produção anterior à 2021 > LABAS > Analysis of X-ray... |
Arranjo 2 | urlib.net > BDMCI > Fonds > Produção anterior à 2021 > LABAP > Analysis of X-ray... |
Conteúdo da Pasta doc | acessar |
Conteúdo da Pasta source | não têm arquivos |
Conteúdo da Pasta agreement | não têm arquivos |
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4. Condições de acesso e uso | |
Idioma | en |
Arquivo Alvo | analysis of x-ray.pdf |
Grupo de Usuários | administrator sergio |
Visibilidade | shown |
Detentor da Cópia | SID/SCD |
Política de Arquivamento | denypublisher denyfinaldraft24 |
Permissão de Leitura | deny from all and allow from 150.163 |
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5. Fontes relacionadas | |
Unidades Imediatamente Superiores | 8JMKD3MGPCW/3ESR3H2 8JMKD3MGPCW/3ET2RFS |
Divulgação | WEBSCI; PORTALCAPES; COMPENDEX. |
Acervo Hospedeiro | sid.inpe.br/banon/2003/08.15.17.40 |
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6. Notas | |
Campos Vazios | alternatejournal archivist callnumber copyright creatorhistory descriptionlevel documentstage doi e-mailaddress electronicmailaddress format isbn label lineage mark mirrorrepository month nextedition notes number orcid parameterlist parentrepositories previousedition previouslowerunit progress project readergroup rightsholder schedulinginformation secondarydate secondarymark session shorttitle sponsor subject tertiarymark tertiarytype typeofwork url versiontype |
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7. Controle da descrição | |
e-Mail (login) | marciana |
atualizar | |
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